The International Journal of Nano Device, Sensor and Systems (IJ-Nano) is an international Journal devoted to nano science and technology of all types of device, sensor and electronic systems. The journal comprises original and significant experimental and theoretical contributions on a wide array of topics relating (but not limited) to the following:
the theory, design, modelling, simulation, fabrication and characterization of micro- and nanometer devices for electronics, advanced solid state devices concept and properties, emerging nanodevices (e.g. carbon nanotubes, graphene, single electron transistors, spintronics), transport mechanism in electronic materials, thin/thick film materials, nanomaterials for device fabrication, compound semiconductors, optoelectronics, photovoltaic, organic and molecular electronics, semiconductor-based sensors and actuators,micro- & nanofluidics, electro mechanical systems (MEMS / NEMS), system on chip, nanocircuit and nanosystem, analogue and digital circuit design, VLSI technology, FPGA-based system design and evaluation, thermal / power analysis of integrated circuit and embedded systems and reliability issues of electronic devices. The wide scope of the Journal encompasses Low power VLSI system systems, wireless communications and signal processing, portable communications and multimedia devices and architectures for low power devices and components.
Kindly please download the template of the IJ-Nano.
Call for papers
|Call for papers
Kindly please register on: http://iaesjournal.com/online/index.php/IJ-NANO/user/register, and submit your paper using our online submission and reviewing system
or submit your paper by email to: email@example.com
Call for papers for 2012 (2 issues)
Vol.1 No.1 May 2012, the deadline for submission is Apr 30, 2012.
Vol.1 No.2 Nov 2012, the deadline for submission is Aug 31, 2012.
IJ-Nano Call for Editors
|IJ-Nano is seeking applications from scholars and researchers from the different fields of a wide array of topics relating to the theory, design, performance, circuit applications and reliability of electronic devices (like transistors/FET, HEMT etc); solid state devices; single electron devices; spintronic devices; integrated nano devices, nano Circuits & Nanosystems; semiconductor materials; transport in electronic materials; thin/thick film materials, analogue and digital circuit design; VLSI technology, microwave circuits and systems, power devices, energy sources, optoelectronic devices, displays, photovoltaic, sensors, electro-mechanical devices, MEMS/ NEMS, system on chip and embedded systems interested to serve as an editor. We will respond to your applications shortly. Interested applicants may contact IEAS Editorial Office: firstname.lastname@example.org. Applicants should submit a detailed CV along with a brief statement of contribution for the journal.|
Vol 2, No 1 (2013): March 2013
Table of Contents
|Synthesis of high yield and cost effective Carbon Nanotubes by Arc Evaporation Method and their Characterization|
|Realization of Metamaterial Zeroth-Order Resonators Based on MIM Capacitor|
|Mohamed M Mansour, El-Sayed M El-Rabaie, Abdel-Aziz T Shalaby, Mostafa A Elmala||7-14|
|Spacer Optimization and Accurate Small-Signal Modeling of 90nm Gate Underlap SOI-MOSFETs for Low Power GHz Applications|
|Indra Vijay Singh|
|Degeneracy Effect on Carrier transport in Bilayer Graphene Nanoribbon|
|Mohammad Javad Kiani, Muhammad Taghi Ahmadi, Meisam Rahmani, F. K Che Harun|